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| PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES * HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP * HIGH SPEED SWITCHING CHARACTERISTICS * NPN COMPLIMENT AVAILABLE: NE02133 * HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 (SOT 23 STYLE) NE97833 DESCRIPTION NEC's NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO CRE PT 2 NE97833 2SA1978 33 UNITS GHz dB dB 8.0 20 A A pF mW 0.5 MIN 4.0 TYP 5.5 2.0 10.0 40 100 -0.1 -0.1 1.0 200 3.0 MAX PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA Noise Figure at VCE = -10 V, IC = -3 mA Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA Collector Cutoff Current at VCB = -10 V, IE = 0 Emitter Cutoff Current at VBE = -2 V, IC = 0 Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz Total Power Dissipation Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97833 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA C C RATINGS -20 -12 -3 -50 150 -65 to +200 100 DC CURRENT GAINS VS. COLLECTOR CURRENT DC Current Gain, HFE VCE = -3 V VCE = -2 V VCE = -1 V 10 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1 -0.1 -1.0 -10 -100 -1000 TYPICAL PERFORMANCE CURVES (TA = 25C) DC POWER DERATING CURVES 400 FREE AIR Collector Current, IC (mA) INSERTION GAIN vs. FREQUENCY 30 Total Power Dissipation, PT (mW) 300 Insertion Power Gain, |S21E|2 20 VCE = -10 V IC = -15 mA 10 VCE = 1 V IC = 5 mA 200 NE97833 100 0 -10 0 0 50 100 150 200 100 200 300 500 1000 3000 Ambient Temperature, TA (C) Frequency, f (MHz) GAIN BANDWIDTH vs. COLLECTOR CURRENT 14 INSERTION GAIN vs. COLLECTOR CURRENT 14 f = 1 GHz Gain Bandwidth Product, fT (GHz) f = 1 GHz Insertion Power Gain, |S21E|2 12 10 VCE = -10 V 12 10 VCE = -10 V 8 8 6 VCE = -3 V 4 VCE = -1 V 2 0 6 4 VCE = -3 V VCE = -1 V 2 0 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NE97833 TYPICAL PERFORMANCE CURVES (TA = 25C) DC CURRENT GAIN VS. COLLECTOR CURRENT 100 VCE = -10 V 6 VCE = 10 V f = 1 GHz NOISE FIGURE VS. COLLECTOR CURRENT DC Current Gain, HFE Noise Figure, NF -100 -1000 4 10 2 1.0 -0.1 0 -1.0 -10 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) SWITCHING CHARACTERISTICS UNITS tON (delay) tr PARAMETERS Turn-on Delay Time Rise Time UNITS ns ns ns ns VIN = 1 V TYP 1.10 0.77 0.40 0.79 tOFF (delay) Turn-off Delay Time tf Fall Time SWITCHING TIME MEASUREMENT CIRCUIT VCC (-) RC1 VOUT VIN RS RL1 Sampling Oscilloscope RC2 RL2 VIN tON (delay) 20 ns tr tf tOFF (delay) 50 VBB (-) VOUT RE VEE (+) VIN = 1 v, VBB = -0.5 V, RC1 = RC2 RS () 160 RC () 1K RL1 () 200 RL2 () 250 RE () 2.7 K VEE (V) 27 VCC (V) 26.3 NE97833 TYPICAL SCATTERING PARAMETERS (TA = 25C) 90 0.8 0.6 0.4 3 4 0.2 5 10 20 50 10 20 -50 -20 -10 S22 -0.2 -5 -4 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 1 1.5 2 S21 135 45 S12 0.2 0.4 0.6 0.8 1 S11 1.5 2 3 45 180 0.1 0.2 0.3 0.4 0.5 0 2.5 NE97833 VCE = -8 V, IC = -10 mA 225 5.0 315 270 VCE = -5 V, IC = -10 mA FREQUENCY (GHz) 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 MAG 0.274 0.273 0.278 0.308 0.352 0.402 0.449 0.506 0.527 S11 ANG -149.2 -177.0 169.8 144.6 125.0 109.1 96.4 79.7 71.1 MAG 6.102 4.037 3.303 2.311 1.808 1.496 1.281 1.023 0.908 S21 ANG 96.9 82.0 74.5 58.7 45.3 33.5 23.6 9.1 -1.8 S12 MAG 0.063 0.093 0.114 0.170 0.229 0.288 0.345 0.458 0.574 ANG 68.1 70.1 70.3 68.1 63.9 58.3 52.4 40.7 27.4 S22 MAG 0.493 0.432 0.412 0.381 0.362 0.359 0.364 0.350 0.246 ANG -30.9 -32.2 -34.5 -44.8 -59.4 -75.9 -91.0 -113.5 -138.8 K 0.97 1.07 1.09 1.08 1.03 0.99 0.95 0.91 0.92 MAG1 (dB) 19.9 14.7 12.8 9.6 7.8 7.2 5.7 3.5 2.0 VCE = -8 V, IC = -10 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.252 0.240 0.243 0.272 0.316 0.369 0.418 0.479 0.503 -140.2 -171.6 173.7 145.9 125.3 109.0 96.4 79.9 71.7 6.426 4.270 3.496 2.445 1.911 1.582 1.353 1.076 0.950 98.5 83.5 76.0 60.5 47.2 35.6 25.5 10.7 -0.4 0.060 0.089 0.109 0.162 0.219 0.276 0.333 0.445 0.563 68.7 70.6 70.9 60.5 65.0 59.8 54.2 42.9 30.2 0.523 -29.0 0.463 -30.1 0.443 -32.3 0.515 -43.9 0.393 -55.2 0.388 -70.6 0.392 -85.0 0.379 -106.3 0.278 -127.3 0.95 1.05 1.08 1.11 1.02 0.98 0.94 0.90 0.90 20.3 15.4 13.4 9.8 8.4 7.6 6.1 3.8 2.3 VCE = -10 V, IC = -15 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.555 0.399 0.348 0.314 0.342 0.393 0.446 0.515 0.529 -80.8 -121.8 -143.5 173.5 142.8 120.2 103.4 81.7 69.6 4.097 3.325 2.864 2.107 1.669 1.382 1.179 0.934 0.844 116.8 94.8 84.2 64.5 49.0 36.0 25.6 11.9 3.0 0.076 0.094 0.106 0.140 0.186 0.241 0.302 0.433 0.575 55.1 53.5 55.4 69.0 62.8 61.5 57.9 47.8 34.3 0.697 -28.4 0.600 -32.6 0.564 -35.2 0.411 -39.4 0.494 -56.1 0.490 -70.2 0.496 -83.7 0.484 -105.8 0.382 -128.7 0.65 0.89 1.00 1.07 1.08 1.00 0.93 0.87 0.90 17.3 15.5 14.3 10.2 7.8 7.4 5.9 3.3 1.7 VCE = -10 V, IC = -3 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 Note: 1. Gain Calculation: MAG = |S21| |S12| 0.214 0.215 0.221 0.254 0.300 0.352 0.402 0.463 0.489 -153.1 179.7 166.8 141.5 122.3 107.1 95.0 79.5 72.1 6.846 4.489 3.664 2.554 1.992 1.648 1.410 1.121 0.984 96.2 82.4 75.4 60.6 47.7 36.2 26.3 11.3 -0.2 0.058 0.087 0.108 0.163 0.220 0.276 0.331 0.440 0.555 73.2 74.0 73.7 70.6 66.0 60.4 54.6 43.4 31.0 0.506 -27.0 0.456 -27.9 0.439 -30.1 0.441 -41.8 0.393 -52.7 0.387 -68.0 0.389 -82.1 0.377 -102.6 0.277 -121.3 0.99 1.06 1.07 1.05 1.01 0.97 0.94 0.89 0.89 20.7 15.6 13.7 10.6 8.9 7.8 6.3 4.1 2.5 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE97833 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 OUTLINE 33 RECOMMENDED P.C.B. LAYOUT 2.4 2 2.9 0.2 0.95 1.9 2 +0.10 0.4 -0.05 (ALL LEADS) 3 1.9 0.95 3 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.8 1 1.0 1.1 to 1.4 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 +0.10 0.16 -0.06 ORDERING INFORMATION PART NUMBER NE97833-T1B-A QUANTITY 3000 PACKAGING Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE 3-174 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. 3-175 |
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